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A distributed turn-off delay compensator scheme for voltage balancing of series-connected IGBTs

Zarghani, M ; Sharif University of Technology | 2024

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  1. Type of Document: Article
  2. DOI: 10.1109/JESTPE.2024.3390845
  3. Publisher: 2024
  4. Abstract:
  5. This article presents a voltage balancing scheme for series-connected insulated gate bipolar transistors (IGBTs) (SCIs) using a turn-off delay compensator. In SCIs, inherent synchronization challenges and parasitic capacitances lead to uneven voltage distribution and potential overvoltage conditions. Traditional time delay adjustment methods adjusting both turn-on and turn-off delays involve complex circuitry, difficult for numerous SCIs. This article examines factors affecting voltage imbalances during turn-on and turn-off transitions, revealing that turn-off imbalances are more critical. Therefore, a straightforward approach is introduced for turn-off delay compensation, eliminating the need for high bandwidth and isolated feedbacks. In addition, in the proposed scheme, by locally adjusting the turn-off delay time for each switch, it obviates the necessity for separate command signals. Consequently, this pragmatic scheme is especially well-suited for applications where the complexity becomes a hindrance to expanding the number of series-connected switches. Simulation and experiments involving four IGBTs within a 2.4-kV system demonstrate a voltage balancing accuracy of less than 20 V. © 2013 IEEE
  6. Keywords:
  7. Series insulated gate bipolar transistors (IGBTs) ; Turn-off delay time adjustment ; Voltage balancing ; Capacitance ; Delay circuits ; Electric power distribution ; Logic gates ; Switching circuits ; Time switches ; Timing circuits ; Delay ; Delay Time ; Gate drivers ; Insulatedgate bipolar transistor (IGBTs) ; Series IGBT ; Series-connected ; Time adjustment ; Turn offs ; Turn-off delay time adjustment ; Voltage balancing ; Insulated gate bipolar transistors (IGBT)
  8. Source: IEEE Journal of Emerging and Selected Topics in Power Electronics ; Volume 12, Issue 3 , 2024 , Pages 2545-2557 ; 21686777 (ISSN)
  9. URL: https://ieeexplore.ieee.org/document/10504839