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Engineering of Chern number of topological bands in bilayer graphene by in-plane magnetic field and electrical bias

Kheirabadi, N ; Sharif University of Technology | 2024

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  1. Type of Document: Article
  2. DOI: 10.1016/j.physe.2024.116009
  3. Publisher: 2024
  4. Abstract:
  5. Based on the full Hamiltonian of bilayer graphene, phase transitions are realized by the change of the in-plane magnetic field and the electrical bias in bilayer graphene. We show that the engineering of Chern numbers of four bands is possible by an applied in-plane magnetic field and an electrical bias in bilayer graphene. Our results are promising for the exploration of new topological phenomena in 2D materials. © 2024 Elsevier B.V
  6. Keywords:
  7. Graphene ; Magnetic fields ; Topology ; Bilayer Graphene ; Chern numbers ; Electrical bias ; In-plane magnetic fields ; Topological bands ; Hamiltonians
  8. Source: Physica E: Low-Dimensional Systems and Nanostructures ; Volume 162 , 2024 ; 13869477 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/abs/pii/S1386947724001139