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  1. Study of cobalt silicides formation in Co/Ta-W/Si(100) multilayer systems
Study of cobalt silicides formation in Co/Ta-W/Si(100) multilayer systems
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Study of cobalt silicides formation in Co/Ta-W/Si(100) multilayer systems

Moshfegh, A. Z

Study of cobalt silicides formation in Co/Ta-W/Si(100) multilayer systems

Moshfegh, A. Z ; Sharif University of Technology | 2003

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  1. Type of Document: Article
  2. DOI: 10.1016/S0040-6090(03)00300-6
  3. Publisher: 2003
  4. Abstract:
  5. The growth of cobalt silicides layer has been studied in Co/Ta, Co/Ta0.5W0.5 and Co/W bilayers grown on Si(100) substrate. The Co and Ta-W films were deposited using thermal evaporation and sputtering techniques, respectively. All these samples were annealed at a temperature range from 400 to 1000 °C in an N2 (80%)+H2 (20%) environment for 60 min. The phase identification and electrical property of the annealed samples were determined by XRD and RS methods. In the Co/Ta/Si(100) system, we have obtained nearly a single crystalline CoSi2(200) layer with RS value of approximately 0.9 Ω/□ at 900 °C. However, reappearance of Co2Ta phase at 1000 °C exhibits unsatisfactory thermal stability for this system. It was shown that for the Co/Ta0.5W0.5/Si(100) system, there is a reasonable thermal stability, but CoSi2 layer was grown in a polycrystalline form with RS value of approximately 2.7 Ω/□ at 1000 oC. For the Co/W/Si(100) system, we have observed nearly a single crystalline CoSi2(200) layer with a RS value of approximately 1.0 Ω/□ at 900 °C exhibiting a good thermal stability in a temperature range from 900 to 1000 °C. © 2003 Elsevier Science B.V. All rights reserved
  6. Keywords:
  7. Barrier layer ; CoSi2 ; Silicidation ; Ta-W
  8. Source: Thin Solid Films ; Volume 433, Issue 1-2 SPEC , 2003 , Pages 298-304 ; 00406090 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/abs/pii/S0040609003003006