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Pseudogap in Gd-based 123 HTSC

Mohammadizadeh, M. R ; Sharif University of Technology | 2003

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  1. Type of Document: Article
  2. DOI: 10.1016/S0921-4526(03)00321-1
  3. Publisher: 2003
  4. Abstract:
  5. The Gd(Ba2-xPrx)Cu3O7+δ single phase polycrystalline samples with 0.00 ≤ x < 1.00 were investigated for pseudogap phenomenon in comparison with the (Gd1-xPrx)Ba2Cu3O7-δ compound. The measured XRD and its Rietveld refinement show that Pr is substituted at Ba site, with its stoichiometric order, and an orthorhombic-tetragonal transition occurs at x = 0.20. For x ≥ 0.60, the solubility limit of the system exceeds. Based on the resistivity measurements, the effect of Pr substitution in 123 structure of HTSC at Gd or Ba site is to increase the pseudogap temperature Ts, although, Pr at Ba site has a stronger effect on the suppression of Ts and superconductivity. Pr-doping not only reduces the carrier density and induces pseudogap, but also simultaneously increases Ts and suppresses the linearity behavior of resistivity vs. temperature in the normal state. Our results imply that understanding the real suppression mechanism of superconductivity by Pr-doping in HTSC is connected unavoidably to the determination of exact position of Pr in the structure. The presented data is in good agreement with the mean field phase diagram. © 2003 Elsevier B.V. All rights reserved
  6. Keywords:
  7. (Gd1-xPrx)Ba2Cu3O7- δ ; Gd(Ba2-xPrx)Cu3O7+δ ; Pr-doping ; Pseudogap
  8. Source: Physica B: Condensed Matter ; Volume 336, Issue 3-4 , 2003 , Pages 410-419 ; 09214526 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/abs/pii/S0921452603003211