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Design & Simulation of 2W Class- C PA in GaAs HEMT Technology at X-Band Range

Sadeghi, Hossein | 2022

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 55242 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Farzaneh, Forouhar; Medi, Ali
  7. Abstract:
  8. A microwave transceiver system requires an array of amplifiers. Low-noise amplifiers (LNAs) are integral parts of receivers while transmitters are based on several stages of power amplifiers (PAs). In modern communication standards, power amplifiers have to achieve high efficiencies over increasingly larger dynamic ranges and banwidths, while maintaining tight linearity requirements. In these systems, PAs must be highly efficient to simplify the thermal management and to reduce dc power requirements. Recently, the use of monolithic microwave integrated circuit (MMIC) for commercial and military applications have been paid more attention to, given the fact that the possibility of building amplifiers in large numbers, sufficient accuracy and reasonable cost in this technology is quite reasonable. There are few works in the literature regarding design of class C PAs in GaAs pHEMT technology. In this thesis, design procedure of an amplifier chain in the X-Band range is studied.The designed PA consists of three amplifying stages, and its output stage includes eight 0.15 um pHEMT transistors in parallel to provide 30 dBm output power. Performance simulations yield a power gain of 16 dB, a bandwidth of 0.8 GHz and a peak power added efficiency of 34%. In order to achieve an output power of 33 dBm, we use Lange couplers and 30 dBm MMIC amplifier in a balance architecture
  9. Keywords:
  10. Power Amplifier ; Balanced Amplifier ; Gallium Arsenaide ; Nonlinear Circuits ; X Band ; Monolitic Microwave Integrated Circuit (MMIC) ; Class C Power Amplifier

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