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Full-Quantum simulation of graphene self-switching diodes

Horri, A ; Sharif University of Technology | 2019

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  1. Type of Document: Article
  2. DOI: 10.1088/0256-307X/36/6/067202
  3. Publisher: Institute of Physics Publishing , 2019
  4. Abstract:
  5. We present a quantum study on the electrical behavior of the self-switching diode (SSD). Our simulation is based on non-equilibrium Green's function formalism along with an atomistic tight-binding model. Using this method, electrical characteristics of devices, such as turn-on voltage, rectification ratio, and differential resistance, are investigated. Also, the effects of geometrical variations on the electrical parameters of SSDs are simulated. The carrier distribution inside the nano-channel is successfully simulated in a two-dimensional model under zero, reverse, and forward bias conditions. The results indicate that the turn-on voltage, rectification ratio, and differential resistance can be optimized by choosing appropriate geometrical parameters. © 2019 Chinese Physical Society
  6. Keywords:
  8. Source: Chinese Physics Letters ; Volume 36, Issue 6 , 2019 ; 0256307X (ISSN)
  9. URL: https://iopscience.iop.org/article/10.1088/0256-307X/36/6/067202