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A low-power single-ended SRAM in FinFET technology

Sayyah Ensan, S ; Sharif University of Technology | 2019

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  1. Type of Document: Article
  2. DOI: 10.1016/j.aeue.2018.12.015
  3. Publisher: Elsevier GmbH , 2019
  4. Abstract:
  5. This paper presents a single-ended low-power 7T SRAM cell in FinFET technology. This cell enhances read performance by isolating the storage node from the read path. Moreover, disconnecting the feedback path of the cross-coupled inverters during the write operation enhances WSNM by nearly 7.7X in comparison with the conventional 8T SRAM cell. By using only one bit-line, this cell reduces power consumption and PDP compared to the conventional 8T SRAM cell by 82% and 35%, respectively. © 2018 Elsevier GmbH
  6. Keywords:
  7. Low-power design ; Near-threshold operation ; Single-ended structure ; SRAM ; Cells ; Cytology ; Electric power supplies to apparatus ; FinFET ; 8t sram cells ; Cross-coupled ; Feedback paths ; Near thresholds ; Read performance ; Single-ended ; Write operations ; Static random access storage
  8. Source: AEU - International Journal of Electronics and Communications ; Volume 99 , 2019 , Pages 361-368 ; 14348411 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/abs/pii/S1434841118312615