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  1. Sequoia: A high-endurance NVM-Based cache architecture

Sequoia: A high-endurance NVM-Based cache architecture

Jokar, M. R ; Sharif University of Technology | 2016

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  1. Type of Document: Article
  2. DOI: 10.1109/TVLSI.2015.2420954
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2016
  4. Abstract:
  5. Emerging nonvolatile memory technologies, such as spin-transfer torque RAM or resistive RAM, can increase the capacity of the last-level cache (LLC) in a latency and power-efficient manner. These technologies endure 109 - 1012 writes per cell, making a nonvolatile cache (NV-cache) with a lifetime of dozens of years under ideal working conditions. However, nonuniformity in writes to different cache lines considerably reduces the NV-cache lifetime to a few months. Writes to cache lines can be made uniformly by wear-leveling. A suitable wear-leveling for NV-cache should not incur high storage and performance overheads. We propose a novel, simple, and effective wear-leveling technique with negligible performance overhead of <0.4% for memory-intensive workloads. Our proposal consists of two mechanisms: 1) a wear-leveling mechanism within each cache set that slightly increases main memory write-back traffic and LLC miss rate and 2) a novel technique to reduce cache interset variation which causes minimum interference with normal cache operation. Using these mechanisms, we show that the lifetime of the NV-cache is boosted up to 13× for different cache configurations. © 2015 IEEE
  6. Keywords:
  7. Lifetime ; Nonvolatile cache (NV-cache) ; Wear-leveling ; Write endurance ; Interference suppression ; Leveling (machinery) ; Random access storage ; Cache architecture ; Cache configurations ; Emerging Non-volatile memory technology ; Lastlevel caches (LLC) ; Minimum interference ; Novel techniques ; Power efficient ; Spin transfer torque ; Cache memory
  8. Source: IEEE Transactions on Very Large Scale Integration (VLSI) Systems ; Volume 24, Issue 3 , 2016 , Pages 954-967 ; 10638210 (ISSN)
  9. URL: http://ieeexplore.ieee.org/document/7097738