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  1. Enhancement of brick-mortar shear bond strength using environmental friendly mortars

Highly reliable 10-W X/Ku-band pHEMT monolithic microwave integrated circuit power amplifier

Frounchi, M ; Sharif University of Technology | 2016

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  1. Type of Document: Article
  2. DOI: 10.1049/iet-map.2015.0134
  3. Publisher: Institution of Engineering and Technology , 2016
  4. Abstract:
  5. In this study, a reliable 10 W high-power amplifier (HPA) is presented along with its design procedure. Implemented on a 0.25-μm InGaAs/AlGaAs/GaAs pseudomorphic high electron mobility transistor (pHEMT) process, the designed HPA achieves power added efficiency (PAE) of more than 33% across the 7.8-12.8 GHz band. The proposed two-stage PA provides 15 dB large signal gain with an average small-signal gain of 18 dB. Peak results are achieved at 12.2 GHz with 40.8 dBm output power and 44% PAE. The reliability of the designed HPA is studied in detail along with a thorough discussion of related concerns
  6. Keywords:
  7. Amplifiers (electronic) ; Heterojunction bipolar transistors ; High electron mobility transistors ; Microwave amplifiers ; Microwave integrated circuits ; Power amplifiers ; Semiconducting aluminum compounds ; Design procedure ; High power amplifier ; Large-signals ; Output power ; Power-added efficiency ; Pseudomorphic high electron mobility transistors ; Small signal gain ; X/Ku-band ; Monolithic microwave integrated circuits
  8. Source: IET Microwaves, Antennas and Propagation ; Volume 10, Issue 6 , 2016 , Pages 656-663 ; 17518725 (ISSN)
  9. URL: http://ieeexplore.ieee.org/document/7459735