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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 46116 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Medi, Ali
- Abstract:
- In recenet years the use of microwave integrated circuits for military and commercial applications has gained much more attention. The advent of monolithic microwave integrated circuits, which provide the possibility of fabrication of amplifiers in large number, sufficient accuracy an affordable price has accelerated this process. Low noise amplifiers as the first blocks in the receiver modules are such circuits that are highly regarded in this field. This block is a key block in the receiver which its noise figure and gain directly affect the sensitivity and dynamic range of the receiver. As a result, a low noise amplifier with low noise figure, high gain, good return loss, low power dissipation and suitable size is required for many systems. Design tradeoffs lead us to compromise between them.One of these tradeoffs is caused by difference of optimum source impedance for noise and input impedance matching .In this project, we tried to find a method to have noise and impedance matching simultaneously. Three diffrent topologies including common source with inductive degeneration, common source with resistive feedback and common source with dual feedback are considered.The optimum design for each of these topologies is given and by applying thiese theories to a 3stage LNA, the initial state for design optimization is obtained.In this project a 3 stage LNA,in 8-12 GHz band, with 1.4dB noise figure, 26dB small signal gain, -8dB input impedance matching, -12dB output matching and 10dBm P1-dB is designed to confirm our theories.GaAs pHEMT process, because of good characteristics for noise and power in high frequencies, is a good choice for microwave and millimeter wave integrated circuits.Design and implementation is done in 0.1 um pHEMT GaAs process
- Keywords:
- Limiter ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT) ; Noise Figure ; Gallium Arsenaide Technology ; Low Noise Amplifier (LNA) ; Input Impedance Matching
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