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Joint mapping of mobility and trap density in colloidal quantum dot solids [electronic resource]
, Article Journal of ACS nano ; 2013, Vol.7, No. 7, P.5757-5762 ; Sutherland, Brandon R ; Ren, Yuan ; Ning, Zhijun ; Simchi, A. (Arash) ; Thon, Susanna M ; Hoogland, Sjoerd ; Sargent, Edward H ; Sharif University of Technology
Abstract
Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated...
Joint mapping of mobility and trap density in colloidal quantum dot solids
, Article ACS Nano ; Volume 7, Issue 7 , 2013 , Pages 5757-5762 ; 19360851 (ISSN) ; Sutherland, B. R ; Ren, Y ; Ning, Z ; Simchi, A ; Thon, S. M ; Hoogland, S ; Sargent, E. H ; Sharif University of Technology
2013
Abstract
Field-effect transistors have been widely used to study electronic transport and doping in colloidal quantum dot solids to great effect. However, the full power of these devices to elucidate the electronic structure of materials has yet to be harnessed. Here, we deploy nanodielectric field-effect transistors to map the energy landscape within the band gap of a colloidal quantum dot solid. We exploit the self-limiting nature of the potentiostatic anodization growth mode to produce the thinnest usable gate dielectric, subject to our voltage breakdown requirements defined by the Fermi sweep range of interest. Lead sulfide colloidal quantum dots are applied as the active region and are treated...