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azizi-mazreah--a
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Routing algorithms study and comparing in interconnection networks
, Article 2008 3rd International Conference on Information and Communication Technologies: From Theory to Applications, ICTTA, Damascus, 7 April 2008 through 11 April 2008 ; 2008 ; 1424417520 (e-ISBN); 9781424417513 (ISBN) ; Movaghar, A ; Barati, A ; Azizi Mazreah, A ; Sharif University of Technology
2008
Abstract
A routing algorithm defines a route which packet traverses to get to destination. In this research we study some kind of routing algorithms that are used in internal connections networks of multi-processor and multi-computers systems. Then we discuss about some routing algorithms which have been implemented network on chip architecture. First, we present a group of routing algorithms based on various criterions, and review so-called category. Afterwards, we study adaptive and deterministic routing algorithms and express circular model applying in internal connections networks and its governing rules in order to prevent dead lock. Then we survey adaptive algorithms such as Deflection routing,...
A high density and low power cache based on novel SRAM cell
, Article Journal of Computers ; Volume 4, Issue 7 , 2009 , Pages 567-575 ; 1796203X (ISSN) ; Manzuri, M. T ; Mehrparvar, A ; Sharif University of Technology
2009
Abstract
Based on the observation that dynamic occurrence of zeros in the cache access stream and cache-resident memory values of ordinary programs exhibit a strong bias towards zero, this paper presents a novel CMOS five-transistor SRAM cell (5T SRAM cell) for very high density and low power cache applications. This cell retains its data with leakage current and positive feedback without refresh cycle. Novel 5T SRAM cell uses one word-line and one bit-line and extra read-line control. The new cell size is 17% smaller than a conventional six-transistor SRAM cell using same design rules with no performance degradation. Simulation and analytical results show purposed cell has correct operation during...
A nanoscale CMOS SRAM cell for high speed applications
, Article 5th International Conference on MEMS NANO, and Smart Systems, ICMENS 2009, 28 December 2009 through 30 December 2009, Dubai ; 2010 , Pages 33-36 ; 9780769539386 (ISBN) ; Manzuri Shalmani, M. T ; Mehrparvar, A ; Sharif University of Technology
2010
Abstract
The leakage current and process variation are drastically increased with technology scaling. In Conventional SRAM cell due to process variations, stored data can be destroyed during read operation. Therefore, leakage current of SRAM cell and stability during read operation are two important parameters in nano-scaled CMOS technology. To overcome these limitations and to increase the speed of conventional SRAMs, we have developed a read-static-noise-margin-free SRAM cell. The developed cell has six-transistors and uses two read/write-lines and two read/write-bit-lines during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The...
New configuration memory cells for FPGA in nano-scaled CMOS technology
, Article Microelectronics Journal ; Volume 42, Issue 11 , 2011 , Pages 1187-1207 ; 00262692 (ISSN) ; Manzuri Shalmani, M. T ; Sharif University of Technology
2011
Abstract
In nano-scaled CMOS technology, the reduction of soft error rate and leakage current are the most important challenges in designing Field Programmable Gate Arrays (FPGA). To overcome these challenges, based on the observations that most configuration bit-streams of FPGA are zeros across different designs and that configuration memory cells are not directly involved with signal propagation delays in FPGA, this paper presents three new low-leakage and hardened configuration memory cells for nano-scaled CMOS technology. These cells are completely hardened when zeros are stored in the cells and cannot flip from particle strikes at the sensitive cell nodes. These cells retain their data with...
Low-leakage soft error tolerant port-less configuration memory cells for FPGAs
, Article Integration, the VLSI Journal ; Volume 46, Issue 4 , September , 2013 , Pages 413-426 ; 01679260 (ISSN) ; Manzuri Shalmani, M. T ; Sharif University of Technology
2013
Abstract
As technology scales the area constraint is becoming less restrictive, but soft error rate and leakage current are drastically increased with technology down scaling. Therefore, in nano-scaled CMOS technology, the reduction of soft error rate and leakage current is the most important challenge in designing field programmable gate arrays (FPGA). To overcome these difficulties, based on the observations that most configuration bit-streams of FPGA are zeros across different designs and that configuration memory cells are not directly involved with signal propagation delays in FPGA, this paper presents a new family of configuration memory cells for FPGAs in nano-scaled CMOS technology. When...
A low power SRAM based on five transistors cell
, Article 13th International Computer Society of Iran Computer Conference on Advances in Computer Science and Engineering, CSICC 2008, Kish Island, 9 March 2008 through 11 March 2008 ; Volume 6 CCIS , 2008 , Pages 679-688 ; 18650929 (ISSN); 3540899847 (ISBN); 9783540899846 (ISBN) ; Manzuri Shalmani, M. T ; Sharif University of Technology
2008
Abstract
This paper proposes a low power SRAM based on five transistor SRAM cell. Proposed SRAM uses novel word-line decoding such that, during a read/write operation, only selected cell is connected to bit-line when one row is selected whereas, in conventional SRAM (CV-SRAM), all cells in selected row connected to their bit-lines, which in turn develops differential voltages across all bit-lines, and this makes energy consumption on unselected bit-lines. Proposed SRAM uses one bit-line and thus has lower bit-line leakage compared to CV-SRAM. Furthermore, the proposed SRAM incurs no area overhead, and has comparable read/write performance versus the CV-SRAM. Simulation results in standard 0.25μm CMOS...
A low power and high density cache memory based on novel SRAM cell
, Article IEICE Electronics Express ; Volume 6, Issue 15 , 2009 , Pages 1084-1090 ; 13492543 (ISSN) ; Noorollahi Romani, M ; Manzuri, M. T ; Mehrparvar, A ; Sharif University of Technology
2009
Abstract
Based on the observation that dynamic occurrence of zeros in the cache access stream and cache-resident memory values of ordinary programs exhibit a strong bias towards zero, this paper presents a novel CMOS four-transistor (4T) SRAM cell for very high density and low power cache applications. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 20% smaller than a conventional six-transistor cell using same design rules and delay access of a cache based on new 4T SRAM cell is 32% smaller than a cache based on 6T SRAM cell. Also the dynamic and static power consumption of new cell is 40% and 20% smaller than 6T SRAM cell,...
A novel zero-aware read-static-noise-margin-free SRAM Cell for high density and high speed cache application
, Article 2008 9th International Conference on Solid-State and Integrated-Circuit Technology, ICSICT 2008, Beijing, 20 October 2008 through 23 October 2008 ; 2008 , Pages 876-879 ; 9781424421855 (ISBN) ; Manzuri Shalmani, M. T ; Noormandi, R ; Mehrparvar, A ; Sharif University of Technology
2008
Abstract
To help overcome limits to the density and speed of conventional SRAMs, we have developed a five-transistor SRAM cell. The newly developed CMOS five-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 18% smaller than a conventional six-transistor SRAM cell using same design rules. Simulation result in standard 0.25μm CMOS technology shows purposed cell has correct operation during read/write and idle mode. The average delay of new cell is 20% smaller than a six-transistor SRAM cell. © 2008 IEEE
A novel nano-scaled SRAM cell
, Article World Academy of Science, Engineering and Technology ; Volume 65 , 2010 , Pages 172-174 ; 2010376X (ISSN) ; Sahebi, M. R ; Manzuri Shalmani, M. T ; Sharif University of Technology
2010
Abstract
To help overcome limits to the density of conventional SRAMs and leakage current of SRAM cell in nanoscaled CMOS technology, we have developed a four-transistor SRAM cell. The newly developed CMOS four-transistor SRAM cell uses one word-line and one bit-line during read/write operation. This cell retains its data with leakage current and positive feedback without refresh cycle. The new cell size is 19% smaller than a conventional six-transistor cell using same design rules. Also the leakage current of new cell is 60% smaller than a conventional sixtransistor SRAM cell. Simulation result in 65nm CMOS technology shows new cell has correct operation during read/write operation and idle mode
Low-leakage soft error tolerant dual-port SRAM cells for cache memory applications
, Article Microelectronics Journal ; Volume 43, Issue 11 , November , 2012 , Pages 766-792 ; 00262692 (ISSN) ; Manzuri Shalmani, M. T ; Sharif University of Technology
2012
Abstract
As transistor dimensions are reduced due to technological advances, the area constraint is becoming less restrictive, but soft error rate, leakage current, and process variation are drastically increased. Therefore, in nano-scaled CMOS technology, soft error rate, leakage current and process variation are the most important issues in designing embedded cache memory. To overcome these challenges, and based on the observation that cache-resident memory values of ordinary programs exhibit a strong bias towards zero, this paper deals with new low leakage, hardened, and read-static-noise-margin-free SRAM memory cells for nano-scaled CMOS technology. These cells are completely hardened and cannot...
Study on the acetylene hydrogenation process for ethylene production: simulation, modification, and optimization
, Article Chemical Engineering Communications ; Volume 200, Issue 7 , Mar , 2013 , Pages 863-877 ; 00986445 (ISSN) ; Zolfaghari Sharak, A ; Mousavi, S. A ; Bakhtiari Ziabari, F ; Shariati, J ; Azizi, S ; Sharif University of Technology
2013
Abstract
In this study, an industrial acetylene hydrogenation unit is simulated utilizing three available kinetic models. The results are compared against six-day experimental data and the best model is selected. Effects of feed temperature and the amount of injected hydrogen on ethylene selectivity are also studied. According to the simulation results, the unit is not working under its optimum conditions. Furthermore, by reduction of the hydrogen flow rate to 52 kg/h, process selectivity is increased. In addition, a new approach is proposed to modify the hydrogenation process and reduce undesired by-products. In the simulation of the modified process, hydrogenation reactors temperature, hydrogen...
Buckling control of morphing composite airfoil structure using multi-stable laminate by piezoelectric sensors/actuators
, Article Proceedings of SPIE - The International Society for Optical Engineering, 7 March 2011 through 9 March 2011, San Diego, CA ; Volume 7978 , 2011 ; 0277786X (ISSN) ; 9780819485403 (ISBN) ; Zabihollah, A ; Azizi, A ; Sharif University of Technology
2011
Abstract
In the present work, an unsymmetric laminated plate with surface bonded piezoelectric sensors, and actuators has been considered. Piezoelectric sensor were used to monitor the load and deformation bifurcation occurs. Monitoring the shape and load of a morphing structure is essential to ascertain that the structure is properly deployed and it is not loaded excessively, thus, preventing structural to failure. A piezoceramic actuator is used to provide activation load and to force the structure to change its stability state from one to another. A non-linear finite element model based on the layerwise displacement theory considering the electro-mechanical coupling effects of piezoelectric...
CO2 /H2 separation using a highly permeable polyurethane membrane: Molecular dynamics simulation
,
Article
Journal of Molecular Structure
;
Volume 1100
,
2015
,
Pages 401-414
;
00222860 (ISSN)
; Mousavi, S. A
;
Sharif University of Technology
Elsevier
2015
Abstract
Abstract In this study, Molecular Dynamics (MD) and Grand Canonical Monte Carlo (GCMC) simulations were conducted to investigate the diffusivity, solubility, and permeability of CO2 , CO, H2 , and H2 O in a polyurethane membrane at three different temperatures. The characterization of the simulated structures was carried out using XRD, FFV, Tg and density calculation, and cavity size distribution. The obtained results were within the expectations reported data in the literature based on the experimental approach, indicating the authenticity of approached in this work. The results showed that the highest diffusivity and permeability coefficients were observed for...
Effect of specimen orientation and heat treatment on electroless Ni-PTFE-MoS 2 composite coatings
, Article Journal of Coatings Technology Research ; Volume 7, Issue 6 , November , 2010 , Pages 697-702 ; 15470091 (ISSN) ; Ghorbani, M ; Azizi, A ; Sharif University of Technology
2010
Abstract
In this study, the effects of simultaneous co-deposition of polytetrafluoroethylene (PTFE) and MoS 2 particles on tribological properties of electroless nickel (EN) coating were studied. The influences of specimen orientation and heat treatment on EN-PTFE-MoS 2 composite coatings were also investigated. Scanning electron microscopy was used to study the morphology of coatings and the distributions of the lubricant particles in the deposits. Chemical analyses of coatings were done by electron dispersive spectrometry. The phases of the coatings were identified by X-ray diffraction utilizing CuKα radiation. Wear and friction properties of the coatings were also determined by pin-on-disk wear...
High-Gain In-Situ Active Calibration Target Design for Millimeter-Wave Imaging Systems
, Article IEEE Antennas and Propagation Society, AP-S International Symposium (Digest) ; 2024 , Pages 653-654 ; 15223965 (ISSN); 979-835036990-8 (ISBN) ; Aghakasiri, A ; Fakharzadeh, M ; Sharif University of Technology
2024
Abstract
In this paper, the design and measurement of a high gain active calibration target (ACT) for millimeter wave imaging system is presented. Increasing the radar cross section in ACT improves the calibration accuracy. For this purpose, we designed a high-gain array antenna, which consists of 32 planar patch elements. The measured antenna bandwidth is 3.5 GHz (26.5-30 GHz) and the peak realized gain is over 19.5 dBi. In addition, in the ACT design, switching between 4 loads instead of 2 loads is proposed to increase the precision of calibration. The measured results confirm the validity of the designed ACT circuit. The implemented ACT can be used for fast in-situ calibration of millimeter wave...
Optimization of HV generator insulation system based on electro-thermal analysis using FEM
, Article Proceedings of the IASTED International Conference on Modelling and Simulation ; 2011 , Pages 288-293 ; 10218181 (ISSN) ; 9780889868878 (ISBN) ; Gholami, A ; Gholami, M. H ; Sharif University of Technology
2011
Abstract
A large number of generators failed due to stator winding problems, mainly insulation deterioration. Insulation degradation assessment plays vital role in the asset life management. Electro thermal analysis is the main characteristic for simulation of generator behavior and to improve the design of stator slot's insulation. Dielectric parameters such as insulation thickness, spacing, material types, geometry of winding and slot are major design consideration. A very powerful method available to analyze electro thermal performance is Finite Element Method (FEM) which is used in this paper. The analysis of various stator coil and slot configurations are used to design the better dielectric...
Morphology and magnetic properties of FeCo nanocrystalline powder produced by modified mechanochemical procedure
, Article Journal of Magnetism and Magnetic Materials ; Volume 322, Issue 21 , 2010 , Pages 3551-3554 ; 03048853 (ISSN) ; Sadrnezhaad, S. K ; Hasani, A ; Sharif University of Technology
2010
Abstract
Properties of FeCo nanocrystalline intermetallic powders prepared by salt-matrix hydrogen reduction of a milled Fe 2O 3-Co 3O 4 mixture were investigated. The product of 72 ks ball-milling at 350 rpm was CoFe 2O 4 nanopowder. Reduction of this powder for 3.6 ks by hydrogen at 750 °C resulted in the formation of Fe 0.67Co 0.33 stoichiometric compound. Scanning electron microscopy, electron dispersive spectrometry, X-ray diffraction and vibrating sample magnetometry were used to characterize the nanopowder. Using a salt-matrix (NaCl as a dispersion medium) resulted in the decrease of the reduction temperature and improvement of the morphology and magnetic properties of the nanopowder....
The robust adaptive control of leader–follower formation in mobile robots with dynamic obstacle avoidance
, Article Mathematics ; Volume 11, Issue 20 , 2023 ; 22277390 (ISSN) ; Naderi Soorki, M ; Azizi, A ; Sharif University of Technology
Multidisciplinary Digital Publishing Institute (MDPI)
2023
Abstract
In this paper, the problem of formation control with regard to leader–follower mobile robots in the presence of disturbances and model uncertainties, without needing to know the velocity of the leader robot, is presented. For this purpose, at first, a first-order kinematic model of leader–follower and leader–leader formations is obtained, and considering the absolute velocity of the leader robots as an uncertainty, a robust adaptive controller is designed to keep the desired formation. In this case, the upper bound of uncertainty is unknown and is obtained via stable adaptive laws. Afterwards, in order to deal with the accelerated robots and obstacles, second-order leader–follower and...
An arbitrary lagrangian-eulerian finite element method for cone-cap plasticity; application to powder compaction simulation
, Article European Congress on Computational Methods in Applied Sciences and Engineering, ECCOMAS 2004, Jyvaskyla, 24 July 2004 through 28 July 2004 ; 2004 ; Anahid, M ; Azami, A. R ; Azizi, S ; Sharif University of Technology
2004
Abstract
The compaction forming of metal powder is a process involving large deformations, large strain, non-linear material behavior and friction. Consequently, the numerical analysis of such a highly non-linear process is a formidable computational problem. In this paper, an ALE technique is presented based on a generalized cap plasticity model in simulation of powder forming processes. In ALE formulation, the reference configuration is used for describing the motion, instead of material configuration in Lagrangian, and spatial configuration in Eulerian formulation. This formulation introduces some convective terms in the finite element equations and consists of two phases. Each time step is...
Optimal PMU placement by an equivalent linear formulation for exhaustive search
, Article IEEE Transactions on Smart Grid ; Volume 3, Issue 1 , 2012 , Pages 174-182 ; 19493053 (ISSN) ; Dobakhshari, A. S ; Nezam Sarmadi, S. A ; Ranjbar, A. M ; Sharif University of Technology
2012
Abstract
Observability of bulk power transmission network by means of minimum number of phasor measurement units (PMUs), with the aid of the network topology, is a great challenge. This paper presents a novel equivalent integer linear programming method (EILPM) for the exhaustive search-based PMU placement. The state estimation implemented based on such a placement is completely linear, thereby eliminating drawbacks of the conventional SCADA-based state estimation. Additional constraints for observability preservation following single PMU or line outages can easily be implemented in the proposed EILPM. Furthermore, the limitation of communication channels is dealt with by translation of nonlinear...